Film growth processes from glow-discharge plasma. Amorphous Si and Si-based alloys.

Amorphous Ta-Si-N thin-film alloys as diffusion barrier in AI/Si metallizations

Amorphous Ta-Si-N thin films of a wide range of compositions were prepared by r~ ~eactive sputtering of a Ta5Si3 target in a N2/ Ar plasma. The relatio~shi~ betwee~ films' compos1t10n an~ resistivity is reported. All obtained films were tested as dtffuston barners between ~1 and S1. Backscattering spectrometry combined with cross-sectional transmis_sion electron m1eroscopy were used to determin...

Microstructure of nanostructured amorphous Si-Au-alloys

Structure of Sputtered Amorphous Zr-Hf-Si Alloys

Amorphous (Zr,Hf)37Si63 alloys were produced by sputtering. Their total structure factors were determined by X-ray diffraction. Using the methods of isomorphous substitution and Reverse Monte Carlo simulation, the partial pair correlation functions were obtained. The results were compared with the partial functions of amorphous Ti40Si60. In the amorphous alloys under investigation the transitio...

Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental i...

The roles of Eu during the growth of eutectic Si in Al-Si alloys

Controlling the growth of eutectic Si and thereby modifying the eutectic Si from flake-like to fibrous is a key factor in improving the properties of Al-Si alloys. To date, it is generally accepted that the impurity-induced twinning (IIT) mechanism and the twin plane re-entrant edge (TPRE) mechanism as well as poisoning of the TPRE mechanism are valid under certain conditions. However, IIT, TPR...